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Localisation dans un système de particules interagissant et diffusant dans un cristal régulierKAGAN, YU; MAKSIMOV, L. A.ZETF. Pis′ma v redakciû. 1984, Vol 87, Num 1, pp 348-365, issn 0044-4510Article

Persistent photoconductivity as a tool for monitoring oxide cluster concentration in silicon wafersHADDAB, Y; MANIC, D; POPOVIC, R. S et al.Microelectronics and reliability. 1998, Vol 38, Num 4, pp 511-514, issn 0026-2714Article

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Influence des accumulations locales d'impuretés sur la forme de la raie spectrale des détecteurs semiconducteursEREMIN, V. K; KASHEVAROV, V. L; PAVLYUCHENKO, L. N et al.Žurnal tehničeskoj fiziki. 1985, Vol 55, Num 7, pp 1400-1405, issn 0044-4642Article

Clustering model in n-doped many-valley semiconductorsFABBRI, M; FERREIRA DA SILVA, A.Physical review. B, Condensed matter. 1984, Vol 29, Num 10, pp 5764-5773, issn 0163-1829Article

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Physico-chemical environment of Al impurity atoms in amorphous silicaJONNARD, Ph; MORREEUW, J.-P; BERCEGOL, H et al.EPJ. Applied physics (Print). 2003, Vol 21, Num 2, pp 147-149, issn 1286-0042, 3 p.Article

Modelling inactive boron during predeposition processesVANDENBOSSCHE, E; BACCUS, B.Journal of applied physics. 1993, Vol 73, Num 11, pp 7322-7330, issn 0021-8979, 1Article

Initial aggregation stage of impurity particles in solid state matrix. I: Theoretical foundations of kinetic parameters calculationsPOZNIAK, J.Acta physica Polonica. A. 1987, Vol 71, Num 6, pp 969-975, issn 0587-4246Article

Electronic structure of oxygen thermal donors in siliconROBERTSON, J; OURMAZD, A.Applied physics letters. 1985, Vol 46, Num 6, pp 559-561, issn 0003-6951Article

Silicon-oxygen complexes containing three oxygen atoms as the dominant thermal donor species in heat-treated oxygen-containing siliconOEHRLEIN, G. S.Journal of applied physics. 1983, Vol 54, Num 9, pp 5453-5455, issn 0021-8979Article

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Group expansions for impurities in superconductorsPOGORELOV, Yu. G; LOKTEV, V. M.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 21, pp 214508.1-214508.5, issn 1098-0121Article

Characterization of lattice defects by means of a double crystal diffractometerFIEDLER, W; MAI ZHENHONG.Zeitschrift für Kristallographie. 1986, Vol 175, Num 3-4, pp 257-261, issn 0044-2968Article

Low-temperature photoluminescence of Eu²⁺ aggregate centres in NaCl matrixMUGENSKI, E; CYWINSKI, R.Physica status solidi. B. Basic research. 1985, Vol 128, Num 1, pp K75-K79, issn 0370-1972Article

Les gaz rares dans les sites interstitiels du siliciumMUDRYJ, A. V; PUSHKARCHUK, A. L; TKACHEV, V. D et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 9, pp 1676-1678, issn 0015-3222Article

Clustering of ultra-low-energy implanted boron in silicon during activation annealingSCHROER, E; PRIVITERA, V; PRIOLO, F et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 71, Num 1-3, pp 219-223, issn 0921-5107Conference Paper

Comments on Mechanical strengthening and impurity precipitation behaviour for divalent cation-doped alkali halidesBERG, G; GRAU, P; FROHLICH, F et al.Journal of materials science. 1983, Vol 18, Num 9, pp 2844-2845, issn 0022-2461Article

Theory of small clusters of helium in metals = Théorie des petits amas d'hélium dans les métauxWILSON, W. D.Radiation effects. 1983, Vol 78, Num 1-4, pp 11-24, issn 0033-7579Article